Quick Overview 

1. Drain to source voltage Vds is 100V
2. Gate to source voltage is ±20V
3. On Resistance Rds(on) of 44mohm at Vgs of 10V
4. Power dissipation Pd of 130W at 25°C

Product Description

          The IRF540N (TO-220-3) MOSFET from International Rectifier is 100V single N channel HEXFET power MOSFET in the TO-220AB package. This MOSFET features extremely low on-resistance per silicon area, dynamic dv/dt rating, rugged, fast switching, and fully avalanche rated as a result, power MOSFET is well known to provide extremely efficiency and reliability which can be used in a wide variety of applications.

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 Features:

1. Drain to source voltage Vds is 100V
2. Gate to source voltage is ±20V
3. On Resistance Rds(on) of 44mohm at Vgs of 10V
4. Power dissipation Pd of 130W at 25°C
5. Continuous drain current Id of 33A at Vgs 10V and 25°C
6. Operating junction temperature range from -55°C to 175°C
7. Applications: Power Management, Industrial, Portable Devices, Consumer Electronics.